AES depth profile and photoconductive studies of AgInS2 thin films prepared by co-evaporation
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Abstract
In this study, thin films of AgInS2 with chalcopyrite-type tetragonal
structure were grown by means of a procedure based on the sequential evaporation of metallic precursors in presence of elemental sulfur in a two-stage process. The effect of the growth temperature and the proportion of the evaporated Ag mass in relation to the evaporated In mass (mAg/mIn) on the phase and homogeneity in the chemical composition were researched through X-ray diffraction measurements and Auger electrons spectroscopy. These measurements evidenced that the conditions for preparing thin films containing only the AgInS2 phase, grown with tetragonal chalcopyrite-type structure and good homogeneity of the
chemical composition in the entire volume, are a temperature of 500 ºC and a 0.89 mAg/mIn proportion